文档介绍：
n 型氧化锌纳米棒/p 型金刚石异质结负阻特
性研究#
桑丹丹1,2,成绍恒1,王启亮1,裴晓强1,3,刘钧松1,李红东1**
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(1. 吉林大学超硬材料国家重点实验室,长春 130012;
2. 徐州工程学院数学与物理科学学院,江苏徐州 221008;
3. 兰州空间技术物理研究所,兰州 730000)
摘要:本文利用热蒸发法,在硼掺杂化学气相沉积(CVD)多晶金刚石膜上生长 ZnO 纳米
棒,制备出 n 型 ZnO 纳米棒/p 型金刚石异质结结构。当金刚石为轻掺杂时,n 型 ZnO 纳米
棒/p 型金刚石异质结具有整流特性;而金刚石重掺杂到简并态时,n 型 ZnO 纳米棒/p 型金
刚石异质结出现微分负阻现象。研究表明微分负阻现象是由异质结的隧穿电流引起的。
关键词:ZnO 纳米棒;硼掺杂 CVD 金刚石;n 型 ZnO 纳米棒/p 型金刚石异质结;微分负阻
中图分类号:
Negative differential resistance of n-ZnO
nanorod/p-diamond heterojunction
Sang Dandan1,2, Cheng Shaoheng1, Wang Qiliang1, Pei Xiaoqiang1,3, Liu Junsong1,
Li Hongdong1
(1. State Key Laboratory of Superhard Materials, Jilin University, ChangChun 130012;
2. Mathematics and Physical Sciences Technology, Xuzhou Institute of Technology,
JiangSu XuZhou 221008;
3. Lanzhou Institute of Physics, LanZhou 730000)
Abstract: By thermal vapor transport method, ZnO nanorods (NRs) were grown on boron-doped
chemical vapor deposited (CVD) polycrystalline diamond films. The n-ZnO NR/p-diamond
heterojunctions are constructed and show typical rectifying current-voltage behavior for lightly
boron-doped diamond. When the p-type diamond is degenerated with heavily boron doping,a
negative differential resistance (NDR) phenomenon is presented for the heterojunctions. The
origin of the NDR is attributed to the tunneling current occurred in the hybrid str