文档介绍：
ITO thin films prepared by a sol-gel spin coating method
and their characterization#
LI Yang, ZHANG Heqiu, HU Lizhong, LIANG Hongwei, LUO Yingming**
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(School of Physics and Optoelectronic Technology, Dalian University of Technology,
LiaoNing DaLian 116024)
Abstract: Ten percent by weight Sn-doped indium oxide (ITO) films were prepared on quartz glass
substrates by sol-gel spin coating method and annealed in air at different temperatures. The starting
solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride
pentahydrate dissolved in ethanol. The structural, morphological, electrical, and optical properties of
the films were investigated by means of X-ray diffraction (XRD), field emission scanning electron
microscopy (FE-SEM), four-point probe and UV-VIS spectrometer. The results showed that the films
were polycrystalline with a cubic bixbyite structure and the film annealed at 500℃ had the minimum
resistivity of ×10-3Ω·cm and the highest transmittance of above 85 % in the visible wavelength
range.
Keywords: Sol-gel; ITO; Spin coating; Annealing temperature
0 Introduction
Indium tin oxide (Sn-doped In2O3, ITO) thin film with the band gap between and
is an excellent n-type semiconductor material and exhibits numerous extraordinary
properties such as high visible light transmittanc