文档介绍：稀磁半导体/半导体异质结中插入非磁势垒结
构的自旋依赖散粒噪声
吴双,郭永
清华大学物理系低维量子物理国家重点实验室,北京 100084
摘要:本文研究了在外加磁场和电场中磁半导体/半导体异质结中插入非磁势垒结构里的自旋
依赖的散粒噪声的量子尺寸效应。研究表明在电子输运过程中,非磁势垒与稀磁势垒起的作用
有很大的差别。随着稀磁半导体层厚度的增加,自旋向下的电子散粒噪声表现出相对规律的振
动而自旋向上的电子散粒噪声则是单调下降。随着非磁半导体层厚度的增加,自旋向下的电子
散粒噪声表现出不规则的振动而自旋向上的电子散粒噪声则是以一个与之前相差很大的速率单
调下降。这个结果说明散粒噪声在测量材料种类和尺寸的探测器上有一定应用价值。
关键词:凝聚态物理学;自旋;散粒噪声;稀磁半导体;异质结
中图分类号: O469
Spin-dependent shot noise in diluted
ic semiconductor/semiconductor
heterostructures with a ic
barrier
WU Shuang, GUO Yong
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics,
Tsinghua University, Beijing 100084, People’s Republic of China
Abstract: We investigate quantum size eﬀect on the spin-dependent shot noise in the diluted
ic semiconductor(DMS)/semiconductor heterostructure with a ic semicon-
ductor (NMS) barrier in the presence of external ic and electric ﬁelds. The results
demonstrate that the NMS barrier plays a quite diﬀerent role from the DMS layer in the
electron transport process. It is found that spin-down shot noise shows relatively regular oscil-
lations as the width of DMS layer increases, while the spin-up shot noise deceases monotonically.
However, as the width of NMS layer increases, the spin-down shot noise displays irregular os-
cillations at ﬁrst and then decreases while the spin-up shot noise decreases at a quite diﬀerent
Foundations: This work was supported by the NSFC (11174168), the SRFDP (20100002110079), and the Na-
tional Basic Research Program of China (2011CB606405).
Brief author introduction: Corresponding author: GUO Yong, Male , Professor, present main research di-
rection:
spin-polarized transport through kinds of mesoscopic systems, spin-orbit coupling eﬀects.
E-mail:
******@.
-1-
rate. The results indicate that the shot noise can be used as a sensitive probe in detecting
material type and its size.
Key words: condensed matter physics; spin; shot noise; diluted ic semiconductor;
heterostructure