文档介绍：Development of a II-VI-Based High Performance, High Band Gap Device
for Thin-Film Tandem Solar Cells
C. S. Ferekides and D. L. Morel
Department of Electrical Engineering
Center for Clean Energy and Vehicles
University of South Florida
4202 E. Fowler Ave.
Tampa, FL
ABSTRACT
Development of the high efficiencies that can only be
attained by tandem structures is important to the 4
advancement of thin-film technologies. Although
significant progress has been made with low and mid band 3
gap polycrystalline devices, there is no viable high band
gap device to pair with these in a tandem structure. We 2
propose development of a high efficiency, high band gap
Zn
device from the II-VI family for this purpose. To achieve a 1
target efficiency of 25%, the high band gap device Band Gap(eV) Cd
efficiency will have to be in the 16 – 18% range, and it
will have to essfully transmit long wavelength light to 0
an underlying low band gap device. Candidate II-VI OSSeTe
materials include CdSe and Znx Cd1-x Te. The initial
structure will be 4-terminal to avoid issues associated with Anions
growing devices on top of each other in 2-terminal format.
We have used AMPS to simulate expected performance.
Figure 1. II-VI band gaps.
1. Introduction However, much of this work was shelved because of the
The ideal band gaps for optimum efficiency in a tandem ess that we en