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National Semiconductor - Bridge-Parallel Amplifier (An Bpa200 - 1997).pdf

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National Semiconductor - Bridge-Parallel Amplifier (An Bpa200 - 1997).pdf

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National Semiconductor - Bridge-Parallel Amplifier (An Bpa200 - 1997).pdf

文档介绍

文档介绍:will expand on the thermal design aspects of Overture ICs. While the bridge/parallel configuration
is only one of many that can be made to obtain higher output power levels, the concept of "design
by power dissipation" is equally applicable to other types of booster circuits.
The BPA-200 schematics, and test results exemplify what can be achieved with ponent
selection, thermal design, and layout techniques. The BPA-200 is only an example and is not
intended for sale. This documentation is intended to show obtainable results and give general
guidance of conceptual design.
III. Thermal Background:
The voltage and current ratings of a power semiconductor are typically the first specs considered in
designing high power amplifiers. The same is true for an integrated monolithic power amplifier.
However, power dissipation ratings are equally important to the long-term reliability of the power
amplifier design. When using a monolithic IC in its intended application and within its specified
capabilities, the thermal design is relatively straightforward. When an IC is used beyond its
capabilities, as in booster circuits, power dissipation issues e more critical and not as
straight- forward. Therefore, the designer must understand the IC's power dissipation capabilities
before using the IC in a booster configuration.
-Typical Characteristic Data
The power dissipation capabilities of a power IC are either specified in the datasheet or can be
derived from its guaranteed output power specification. While the power dissipation rating for the
LM3886T is 125W, this number can be misleading. Its power dissipation specification is derived
from the IC's junction-to-case thermal resistance, ØJC=l °C/W, the maximum junction
temperature, TJ=150°C, and the ambient air, TA=25°C. As stated in the datasheet, the device must
be derated based on these parameters while operating at elevated temperatures. The heatsinking
requirements for the application are based on these

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