文档介绍：Estimation of Electrical Parameters of
anic Semiconductor Diode from
Measured I-V Characteristics
Syed Abdul Moiz, Mansoor M. Ahmed, and Kh. S. Karimov
In this paper the effect of temperature on the electrical I. Introduction
properties anic semiconductor disperse orange dye 25
(OD) have been examined. Thin films of OD have been A number of potential applications anic semiconductor
deposited on In2O3 substrates using a centrifugal machine. DC materials for use in electronics and optoelectronics devices
current-voltage (I-V) characteristics of the fabricated devices such as sensors, plastic batteries, solar cells, field effect
(Al/OD/In2O3) have been evaluated at varying temperatures transistors, optical data storage, organic electroluminescent
ranging from 40 to 60°C. A rectification behavior in these devices, and so on have been found [1]. However, degradation
devices has been observed such that the rectifying ratio of these devices with respect to temperature and the aging
increases as a function of temperature. I-V characteristics effect are still some serious concerns. To improve stability
observed in Al/OD/In2O3 devices have been classified as low together with improved performance, it is very important to
temperature (≤ 50°C) and high temperature characteristics have a good understanding of the physical phenomena taking
(approximately 60°