文档介绍：STG3P3M25N60
3 Phase inverter
IGBT - SEMITOP®3 module
PRELIMINARY DATA
General features
VCE(sat)(Max)
Type VCES @ IC=7A, ******@80°C
Ts=25°C
STG3P3M25N60 600V < 25A
■ N-channel very fast PowerMESH™ IGBT
■
Lower on-voltage drop (Vcesat)
■
Lower CRES / CIES ratio (no cross-conduction SEMITOP®3
susceptbility)
■ Very soft ultra fast recovery antiparallel diode
■ High frequency operation up to 70 KHz
■ New generation products with tighter
parameter distribution Internal schematic diagram
■ One screw mounting
■ Compact design
■ Semitop®3 is a trademark of Semikron
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, with outstanding
performances.
Applications
■ High frequency inverters
■ Motor drivers
Order codes
Sales Type Marking Package Packaging
STG3P3M25N60 G3P3M25N60 SEMITOP®3 SEMIBOX
May 2006 Rev1 1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Contents STG3P3M25N60
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STG3P3M25N60 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGS =