文档介绍：Conduction band offset at the InN/ GaN heterojunction Kejia ? Albert ?Wang, a ?Chuanxin Lian, Ning Su, and Debdeep Jena Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA John TimlerSystem Creations, 3838 N. Causeway Blvd., Suite 3070 Metairie, Los Angeles 70002, USA ?Received 27 September 2007; accepted 14 November 2007; published online 7 December 2007 ? The conduction-band offset between GaN and InN is experimentally determined. InN / n -type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current ?ow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ? eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of eV across the heterojunction, consistent with the capacitance measurement. bining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be ? E C=± eV. ? 2007 American Institute of Physics . ? DOI: ? In the past few years, InN has attracted enormous inter- est since the band gap of InN has been found to be around ? eV. 1Because the band gaps of the nitride semiconduc- tor family ?AlN, GaN, InN, and their