文档介绍：Electrochimico Acta, Vol. 41, Nos. 718, pp. 967-973. 1996
Pergamon a Ltd.
Copyright 0 1996
Printed in Great Britain. All rights reserved
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IMPEDANCE SPECTROSCOPY AT SEMICONDUCTOR
ELECTRODES: REVIEW AND RECENT DEVELOPMENTS
W. P. GOMES and D. VANMAEKELBERGH*~
Universiteit Gent, Laboratorium voor Fysische Chemie, Krijgslaan 281, B-9000 Gent, Belgium
t Universiteit Utrecht, Debye Institute, . Box 80000, NL-3508 TA Utrecht, herlands
(Received 8 May 1995)
Abstract-It is demonstrated that impedance spectroscopy can be used for the energetic characterization
of the semiconductor/electrolyte interface. Furthermore, by means of several examples, it is shown how
the mechanisms of electrochemical reactions are studied by the electrical impedance technique. Also the
use of the optoelectronic admittance method for the investigation of photoelectrochemical processes is
discussed.
Key words: semiconductors, electrochemistry, impedance, bination, photocurrent.
INTRODUCTION semiconductor; the corresponding sub-surface region
in the semiconductor is denoted as the depletion
Impedance spectroscopy constitutes a powerful tool layer. As a consequence, variations in applied poten-
for studying semiconductor electrodes, yielding tial will nearly exclusively change the potential drop
information on the structure of t