文档介绍：Integration of Carbon Nanotubes with
Semiconductor Technology; Fabrication of Hybrid
Devices by III-V Molecular Beam Epitaxy
S Stobbe1‡, P E Lindelof1,2, J Nyg˚ard1,2
1 Hytronics Aps, Universitetsparken 5, DK-2100 Copenhagen Ø
2 Niels Bohr Institute and Nano-Science Center, Universitetsparken 5,
DK-2100 Copenhagen Ø
E-mail: ******@
Abstract. We review a number of essential issues regarding the integration
of carbon nanotubes in semiconductor devices for electronics: Material
compatibility, electrical contacts, functionalities, circuit architectures and
reliability. In the second part of the paper, we present our own recent results on
incorporation of single-wall nanotubes in III-V semiconductor heterostructures
grown by molecular beam epitaxy (MBE). We demonstrate that singlewall
carbon nanotubes can be overgrown using MBE and electrical contacts to the
nanotubes are obtained by GaMnAs grown at 250◦C. The resulting devices
can exhibit field effect action at room temperature.
PACS numbers: , , .+h
Submitted to: Semicond. Sci. Technol.
‡ Present address: COM•DTU, Technical University of Denmark, DK-2800 Kgs. Lyngby,
Denmark
Integration of Carbon Nanotubes with Semiconductor Technology 2
I. Introduction
It is well documented that carbon nanotubes (CNTs) have excellent electrical
properties both as metals and semiconductors. They can act as one-dimensional
ballistic conductors at room temperature as well as field-effect transistors (FETs)
with parable to that of silicon FETs. 1,2,3 Basic logic circuits have
been formed by coupling such devices 4,5,6. Moreover, nanotubes have extraordinary
mechanical strength and high thermal conductivity. Recently, new functionalities of
nanotube devices have been demonstrated experimentally, . gate-controlled IR
electroluminescence from FETs 7,8 and singlewall carbon nanotubes are outstanding
candidates for novel electronic applications.
In addition to the perfor