文档介绍：arXiv:cond-mat/0506575 v2 16 Aug 2005
h o-utvt sqatzdi multiples in quantized is of conductivity non-diagonal the
is clblt otennmtrszs n h ability the and ( sizes, huge nanometer sustain the to to characteris- This mechanical remark- scalability excellent truly tics, as reported. such possesses was properties layer graphene, able atomic called single material, a new to thick- down with films ness paper graphite recent monocrystalline a free-standing (the In number fractional QHE). a fractional or (IQHE)) effect Hall quantum
n h lcrcfil effect field electric the ing
ecie yalweeg 21 iesoa effective be dimensional can (2+1) films low-energy massless graphite a thinnest by The ”relativistic” makedescribed two-dimensional degeneracy system. truly pseudospin electronic the unique the of a and energies graphene K) to 1000 (up of excitations order quasiparticle of trum make this when nanoelectronics. future All and in hole applications micro- altered. for to is candidate voltage promising electron a gate graphene from applied type of even sign carrier and the times the tens change by to samples in concentration carrier
eHa a lhnadSunkvd asoscillations shifted Haas is de quasiparticles Shubnikov Dirac and for Alphen van Haas otrans- de and important measurements thermodynamic The in port Schr¨odinger theories observed and field. be Dirac may ic the a between in differences graphene of