文档介绍：The documentation and process conversion INCH-POUND
measures necessary to comply with this revision
shall be completed by 4 May 2009. MIL-PRF-19500/452J
4 February 2009
SUPERSEDING
MIL-PRF-19500/452H
26 March 2008
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,
VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1
THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED
(TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H,
JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* Scope. This specification covers the performance requirements for volts ±5 percent, silicon, low bias
current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each
unencapsulated device type die. Seven levels of radiation hardened (total dose only) pro