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PTVSHC2EN4V5B--EOS浪涌防护器件.pdf

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PTVSHC2EN4V5B--EOS浪涌防护器件.pdf

上传人:陈潇睡不醒 2021/3/24 文件大小:215 KB

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PTVSHC2EN4V5B--EOS浪涌防护器件.pdf

文档介绍

文档介绍:PTVSHC2EN4V5B
Transient Voltage Suppressor


Description

The PTVSHC2EN4V5B ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PTVSHC2EN4V5B protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced transient
events. The PTVSHC2EN4V5B is available in a DFN1610-2L package with working
voltages of volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2,
(±30kV air, ±30kV contact discharge)



Feature Applications
 
1200W Peak pulse power per line (tP = 8/20μs) Cell phone handsets and accessories
 DFN1610-2L package  Personal digital assistants (PDA’