文档介绍：ARTICLE IN PRESS
Solar Energy Materials & Solar Cells 90 (2006) 3416–3421
ate/solmat
Large-scale, high-efficiency thin-film silicon solar
cells fabricated by short-pulsed plasma CVD method
Y. FujiokaÃ, A. Shimizu, H. Fukuda, T. Oouchida, S. Tachibana,
H. Tanamura, K. Nomoto, K. Okamoto, M. Abe
Solar Systems Development Center, Solar Systems Group, Sharp Corp., 282-1 Hajikami, Shinjo,
Kitakatsuragi, Nara 639-2198, Japan
Received 24 May 2005; accepted 20 October 2005
Available online 30 August 2006
Abstract
A novel growth technology of microcrystalline silicon (mc-Si:H) thin films has been developed
using short-pulsed VHF plasma CVD method [K. Nomoto, et al., Short-pulse VHF plasma-
enhanced CVD of high-deposition-rate a-Si:H films, in: Proceedings of the 14th European
Photovoltaic Solar Energy Conference and Exhibition, 1997, pp. 1226–1230]. The homogeneity of
crystallinity in a film over square meter was improved by using this technology. We applied this
technology to intrinsic layers of mc-Si:H single solar cell, and confirmed that the homogeneity of cell’s
characteristics on a large-scale substrate was improved. And using this novel fabrication technology
to intrinsic layers of a-Si:H/mc-Si:H tandem thin-film Si solar cell, initial conversion efficiency of
%, corresponding to about 11% stabilized conversion efficiency was obtained with a large-scale