first gan transistors fabricated on 4'' silicon wafers论文.pdf

文档介绍：Technology: Microelectronics
Kopin developing C-doped
InP HBTs with Rockwell
Following announcements by rate sufficient quantities of car- “Rockwell Science Center
TRW, NorteLVitesse, HRL Labs bon into InP HBTs, especially pioneered the development of
and JDS Uniphase of moves into by MOCVD” HBT technology,” says Fan.
InP production, in January GaAs “Seveml years ago, Kopin and
Directer of Transistor
HBT manufacturer Kopin Corp Rockwell co-developed com-
(Taunton, MA, USA) began to Technology Dr Roger E Welser mercial GaAs-based HBT power