文档介绍：Solutions Manual to pany
SEMICONDUCTOR DEVICES
Physics and Technology
2nd Edition
S. M. SZE
UMC Chair Professor
National Chiao Tung University
National Nano Device Laboratories
Hsinchu, Taiwan
John Wiley and Sons, Inc
New York. Chicester / Weinheim / Brisband / Singapore / Toronto
1
Contents
Introduction--------------------------------------------------------------------- 0
Energy Bands and Carrier Concentration-------------------------------------- 1
Carrier Transport Phenomena -------------------------------------------------- 7
p-n Junction -------------------------------------------------------------------- 16
Bipolar Transistor and Related Devices---------------------------------------- 32
MOSFET and Related Devices------------------------------------------------- 48
MESFET and Related Devices------------------------------------------------- 60
Microwave Diode, Quantum-Effect and Hot-Electron Devices --------------- 68
Photonic Devices ------------------------------------------------------------- 73
Crystal Growth and Epitaxy--------------------------------------------------- 83
Film Formation---------------------------------------------------------------- 92
Lithography and Etching------------------------------------------------------ 99
Impurity Doping--------------------------------------------------------------- 105
Integrated Devices------------------------------------------------------------- 113
0
CHAPTER 2
1. (a) From Fig. 11a, the atom at the center of the cube is surround by four
equidistant nearest neighbors that lie at the corners of a tetrahedron. Therefore
the distance between nearest neighbors in silicon (a = Å) is
1/2 [(a/2)2 + ( 2a /2)2]1/2 = 3a /4 = Å.
(b) For the (100) plane, there are two atoms (one central atom and 4 corner atoms
each contributing 1/4 of an atom for a total of two atoms as shown in Fig. 4a)