文档介绍：SemiconductorPhysicsandDevices:BasicPrinciples,3rdeditionChapter1SolutionsManualProblemSolutionsChapter1ProblemSolutions4πr3=FI4atomspercell,(a)fcc:8corneratoms×1/8=1atomThen6faceatoms×½=3atomsF4πr3ITotalof4atomsperunitcell4GJH3KRatio=×⇒100%Ratio=74%(b)bcc:8corneratoms×1/8=1atom162r31enclosedatom=1atom(c)Body-centeredcubiclatticeTotalof2atomsperunitcell4dra==43⇒=ar(c)Diamond:8corneratoms×1/8=1atom36faceatoms×½=3atoms344enclosedatoms=4atomsUnitcellvol.==,soatomvol.=2GJ(a)4GaatomsperunitcellH3K4ThenDensity=⇒33π−−H3K=223Ratio=×⇒100%=%4r4Asatomsperunitcell,sothatFI22−3H3KDensityofAs=(d)Diamondlattice(b)88GeatomsperunitcellBodydiagonal==dra83=⇒=ar83Density=⇒3−.==a3FI−H3KDensityofGe=,(a)Simplecubiclattice;ar=2Then3Unitcellvol==arr3()283=3F4πrI8GJ4πr3H3K=()FIRatio=×⇒100%Ratio=34%1atompercell,=×⇒100%Ratio=%,atoms8r3is74%;Thereforeaftercoffeeisground,(b)Face-centeredcubiclatticeVolume===42⇒a==22r23Unitcellvol==ar322=162r3ch3SemiconductorPhysicsandDevices:BasicPrinciples,3rdeditionChapter1SolutionsManualProblemSolutionsThenmassdensityis−=⇒°83(a)aA=,ar=−83bgρ=()===°°°=+=()()neighbor=⇒(a)(b)NumberdensityaA=°8−=⇒Density=510xcm223−=⇒−3−3(c)()..510x()==ρ=bg⇒=⇒22−3DensityofB−=(b)Sameas(a)(c)==()=°(a)(a)SurfacedensityNow11==⇒2rra+=23⇒=−−°sothatrA=−(b)A-type;1atomperunitcellSameforAatomsandBatoms1Density=⇒(b)Sameas(a)−8(c)Samematerial23−3Density(A)=-type:1atomperunitcell,