文档介绍：U D C
D issertation Subm itted to
H ebei U niversity of Technology
for
T he M aster D egree of
M icro-electronics & Solid-electronics
T H E D E SIG N O F H IG H T E M P E R A T U R E P R E S SU R E
SE N S O R A N D C O M P U T R SIM U L A T IO N
by
G eng Q ingtao
Supervisor : Prof. Sun Y icai
N o vem ber 2007
SO I
-A lN
SO I M E M S
p n
A l 600
PbO -Z nO -B 2O 3
-A lN C M O S
A N SY S
AlN, SiO2 A l2 O 3
T H E D E SIG N O F H IG H T E M P E R A T U R E PR E SS U R E
SE N SO R A N D C O M P U T R SIM U L A T IO N
A B ST R A C T
P ressu re sen sor used for high tem perature is regarded highly by people for its special
applications. It is n ecessary for us to m ake a pressure m easure in high tem peratu re environm ent
such as the field of petroleum , chem ical in dustry, aeronautics and astronautics. Polysilicon h igh
tem peratu re pressure sensor and SO I high tem perature pressu re sensor are the ideal product for
replacing the ordinary diffu sion silicon pressure sensor in the high tem perature pr essure m easure
at present m arket.
A polysilicon-A lN film pressure sensor used for high tem perature is developed in this paper.
It is designed by the characteristic of polysilicon high tem p erature pressure sensor, SO I high
tem peratu re pressure sensor as w ell as M E M S technology.