文档介绍：CMP Introduce
What is CMP
1、Chemical Mechanical Planarization
2、CMP is able to planarize surface by removing material such topology is elimated or material is left at define area
3、CMP provides global planarity
CMP Trait
Advantage:
1、Provide wide window for etch and photo
2、Improve metal step coverage
3、Increase IC reliability
4、Reduce defects
5、No hazardous Gas
6、Reduce cycle time
Disadvantage:
1、Cost of ownership is high
2、Process instability
plicated consumable
Degrees of Surface Planarity
Unplanarization
Surface smoothing
Local planarization
Global planarization
Planarization Schemes
R
S
T
S
T
f
Standard CMP flow
CMP Flow----ILD
SA-CVD BPSG
SiH4 USG
Gate stack
Field oxide
SiH4 USG 2 kÅ
SA-CVD BPSG 3 kÅ ?
BPSG re-flow
CMP Flow----ILD
PE-TEOS
SA-CVD BPSG
SiH4 USG
Gate stack
Field oxide
SiH4 USG 2 kÅ
SA-CVD BPSG 3 kÅ
BPSG re-flow
PE-TEOS 8 kÅ
CMP 4 kÅ
CMP Flow----IMD
TiN
Al-Cu
W
Ti / TiN
PE-TEOS
SA-CVD BPSG
SiH4 USG
Gate stack
Field oxide
SiH4 USG 2 kÅ
SA-CVD BPSG 3 kÅ
BPSG re-flow
PE-TEOS 8 kÅ
CMP 4 kÅ
Contact/M1
SiH4 USG 1 kÅ
SA-CVD USG 4 kÅ