文档介绍：Journal of The Electrochemical Society, 158 ͑1͒ D1-D5 ͑2011͒ D1
0013-4651/2010/158͑1͒/D1/5/$ © The Electrochemical Society
Atomic Layer Deposition of Ni Thin Films and Application
to Area-Selective Deposition
Woo-Hee Kim,a Han-Bo-Ram Lee,b Kwang Heo,c Young Kuk Lee,e
Taek-Mo Chung,e Chang Gyoun Kim,e Seunghun Hong,c,d Jong Heo,a and
Hyungjun Kimb,*,z
aDepartment of Material Science and Engineering, Pohang University of Science and Technology, Pohang
790-784, Korea
bSchool of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea
cDepartment of Physics and Astronomy and dInterdisciplinary Program in Nano-Science and Technology,
Seoul National University, Seoul 151-747, Korea
eAdvanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
͓͔͑͒͑͒͑͒
Ni thin films were deposited by atomic layer deposition ALD using bis dimethylamino-2-methyl-2-butoxo nickel Ni dmamb 2
as a precursor and NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-
resistivity films were deposited on Si and SiO2 substrates, producing high-purity Ni films with a small amount of oxygen and
negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing
this conformality, Ni/Si core/shell nanowires wit