文档介绍：ANALYSIS OF THE ‘BOTTOM–UP’ FILL DURING COPPER
METALLIZATION OF SEMICONDUCTOR INTERCONNECTS
by
ROHAN AKOLKAR
Submitted in partial fulfillment of the requirements
For the degree of Doctor of Philosophy
Dissertation Advisor: Dr. Uziel Landau
Department of Chemical Engineering
CASE WESTERN RESERVE UNIVERSITY
May, 2005
CASE WESTERN RESERVE UNIVERSITY
SCHOOL OF GRADUATE STUDIES
We hereby approve the dissertation of
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candidate for the . degree *.
(signed)_______________________________________________
(chair of mittee)
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(date) _______________________
*We also certify that written approval has been obtained for any
proprietary material contained therein.
Dedicated To My Beloved Grandmother Late Smt. L. Akolkar
TABLE OF CONTENTS
Page Number
List of Tables 4
List of Figures 5
Acknowledgements 17
List of Symbols 18
Abstract 22
1. Introduction 24
2. Additives Interactions during Copper Interconnect Metallization –
Characterization and Modeling 32
Experimental Procedure 34
Transient Additives Adsorption on Copper 36
PEG adsorption 38
SPS adsorption 41
Adsorption between PEG and SPS 44
PEG Transport and Adsorption 46
PEG Transport to the Via Rim 47
PEG Transport inside the Via 54
Effect of PEG Transport Delay on Electrode ics 61
The Via Fill Process 65
Simulation of Via-Fill 69
Conclusions 74
3. prehensive Model for the ‘Bottom-up’ Fill during Copper
Metallization of