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多孔硅微结构与应用研究摘要
多孔硅由于其原料储备大,制作工艺简单,是一种很有潜力的材料。硅用作场发射阴极的材料,属于第一类冷阴极材料,它的最大优点是可以与控制电路集成在一起,体积小,重量轻;另外,由于其孔隙率高、比表面积大等优点,有利于它对气体的吸收和感应,是一种较为理想的薄膜生长载体。
本文采用双槽电化学腐蚀法及表面处理技术获得性能稳定的多孔硅。主要对制得的不同多孔硅样品进行结构表征:实验中采用原子力显微镜和扫描电子显微镜表征了多孔硅样品的表面形貌及多孑L硅横截面的表面形貌。分析了不同腐蚀时间下多孔硅样品表面粗糙程度、孔径大小和薄膜厚度等微结构性能;同时,观测了经过Pd2+金属溶液沉浸的多孔硅样品表面形貌。
研究了腐蚀时间对多孔硅场发射性能的影响。另外,为了更好提高多孔硅薄膜的场发射特性,对其表面进行Ar离子处理。经过等离子处理后,开启场强变得更小,电流密度变大,场发射性能得到了很好改善。在外加电场为15V·Ixm以
时,电流密度可达到125衅·cm~,是未经等离子处理样品的3倍多。我们还成
功的设计和制作了以多孔硅为阴极的10×10场发射发光二极管阵列器件。对经过Pd2+溶液沉浸后的多孔硅进行了性能测试。采用了激光诱导击穿光谱
技术分析了多孔硅的特征谱线。经过Pd2十溶液沉浸后的多孔硅特征有明显的特征谱线,没有出现有金属盐特征谱线。采用X射线能谱仪对样品进行元素含量分析,Pd含量随着沉浸时间而逐渐增加,%附近。采用四探针测试仪测试样品的电阻率,未经过沉浸的多孔硅样品电阻率较大,经过Pd2+ 离子沉浸样品表面和底层曲线斜率基本相当,都远小于未经沉浸的多孔硅样品。。
。, 关键词:多孔硅;表面形貌:场发射;Pd金属沉浸
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ABSTRACT
Porous silicon(PS)is one of promising materials because of its Simple techn0109y and large reserves of raw as field emission cathode is the first type cold cathode biggest advantage are integrated with control circuitry,small size and light addition,due to its high porosity and large specific surface
PS films were fabricated by anode oxidation and cathode deoxidize surface
dispose surface morphology of the PS films were characterized bv atomic force microscopy(AFM),and the of the PS films were characterized by scanning electron microscopy(SEM).Surface roughness,hole
diameter and film thickness were studied under different etching the
etching time on the porous silicon field emission properties of order to improve PS films field emission properties,Plasma treatment Was Plasma treatment can effctively improve field emission the applied electric field for the 1 5 V。lxmq,the current density can be achieved 1251xA·cm~.more thaJl 3
times of before plasma have also designed one kind of porous silicon
field。emission l