文档介绍：第30卷第6期
电
子
元
件
与
材
料
2011年6月
ELECTRONIC
COMPONENTS
AND
MATERIALS
l
基于板上封装技术的大功率LED热分析
姜斌1,宋国华2,缪建文3,袁莉2,纪宪明2
(,江苏南通226019;,江苏南通226007;
学化工学院,江苏南通226019)
摘要:根据大功率LED板上封装(COB)技术的结构特点,提出三种COB方法。第一种方法是把芯片直接键
-(COB--III型),另外两种方法是分别把芯片键合在铝基板上和铝基板的印刷线路板上(c0B—II
和coB—I型),并对三种COB的热特性进行有限元模拟、实验测量和对照分析。结果表明:在环境温度为30℃时,
采用第一种封装方法的芯片结温比第二、,℃,,;采用
第一种封装方法的芯片光衰小于第二、三种封装方法。
关键词:大功率LED;板上封装‘9热阻;有限元热分析
中图分类号:TN383
文献标识码:A
文章编号:1001—2028(2011)—05
Thermal analysis of high-power LED based
on
COB packaging technology
JIANG Binl,SONG
Guohua2,MIAO Jianwen3,YUAN
Li2,JI Xianmin92
(
ofElectronics and Information,Nantong University,Nantong
226019,Jiangsu Province,China; of
Science,Nantong University,Nantong
226007,Jiangsu Province,China; ofChemistry and Chemical
Engineering,Nantong
University,Nantong
226019,Jiangsu
Province,China)
Abstract:Three kinds of hiigh・power LED packing methods based
the
and the character of COB were
presented,the first method Was that the LED chip Was directly boned to the aluminum
radiators(COB--III),the
2nd and
3rd metllods were
that LED chips were bonded
aluminum pad and PCB
board(COB—II,COB—I),
thermal
characteristics of the three COB structures were simulated by FEM analysis and results show that when
the
ambient temperature is 30℃,the LED junction temperatures of COB—Il and COB—I structures
2 ℃and
℃respectively higher than that of
COB—III
structure,and heat
resistances
of
COB—II
and
COB—I
structures
.
I“W respectively higher than that
ofCOB--lII,and COB—IU
structure have lower optical decline。
Key words:hi曲-power LED;chip on board;heat resistance;finite element
thermal
analysis
由于芯片结温的高低直接影响到LED出光效
封装(Chip
On
Board,COB)技术被引入到LED封装
率