文档介绍：Atomic Layer Deposition of
Metal Oxide and Nitride
Thin Films
A thesis presented
by
Jill Svenja Becker
to
The Department of Chemistry and Chemical Biology
in partial fulfillment of the requirements for the degree of
Doctor of Philosophy
in the subject of
Chemistry
Harvard University
Cambridge, Massachusetts
December 2002
© 2002 Jill Svenja Becker
All rights reserved.
Atomic Layer Deposition of Metal Oxide and Nitride Thin Films
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Abstract
Advisor: Prof. Roy G. Gordon Jill Svenja Becker
With the continued miniaturization of thin film devices, growth techniques are
required that deposit conformal films with atomic layer control. In this thesis, atomic
layer deposition (ALD) techniques were developed to achieve conformal and atomic
layer controlled film growth. Reactors were constructed and optimized for testing
potential precursors and deposition processes. Several methods of volatilization and
delivery into the reactor were studied and optimized. All of the ALD methods are based
on sequential, self-limiting surface reactions. The research included developing new
chemistries and new precursors for ALD, optimizing and characterizing film growth and
evaluating properties of ALD films. This thesis is based on experimental work carried
out during the years 1999-2002 at Harvard. It will first review ALD in general. Then,
the growth and properties of films of metal oxides and nitrides will be described. The
self-limiting film growth mechanism in ALD ensures excellent film conformality and
uniformity over large areas, and atomic position and thickness control. A
variety of electronic films have been deposited by ALD. In this thesis, ALD deposition
and material characterization of two groups of films will be examined: (i) insulating
films and (ii) conductive films. In every case atomic