文档介绍：Atomic Layer Deposition of Noble Metal Thin Films
Titta Aaltonen
Laboratory of anic Chemistry
Department of Chemistry
Faculty of Science
University of Helsinki
Helsinki, Finland
Academic Dissertation
To be presented, with the permission of the Faculty of Science of the University of
Helsinki, for public criticism in Auditorium A110 of the Department of Chemistry,
A. I. Virtasen aukio 1, on April 8th, 2005 at 12 o’clock noon.
Helsinki 2005
Supervisors
Professor Markku Leskelä
and
Professor Mikko Ritala
Department of Chemistry
University of Helsinki
Finland
Reviewers
Professor Hyungjun Kim
Department of Materials Science and Engineering
Pohang University of Science and Technology
Korea
Professor Hannu Kattelus
VTT Information Technology
VTT Technical Research Centre of Finland
Finland
Opponent
Professor Steven e
Department of Chemistry and Biochemistry
University of Colorado
USA
Titta Aaltonen 2005
ISBN 952-91-8460-3 (paperback)
ISBN 952-10-2390-2 (pdf version)
/
Yliopistopaino
Helsinki 2005
2
Abstract
Noble metal thin films have several potential applications for example in integrated
circuits. In this work, new noble metal processes have been developed for atomic layer
deposition (ALD), which is a gas phase thin film deposition method based on alternate
saturative surface reactions. The self-limiting film growth mechanism of ALD leads to
films with excellent conformality and good large area uniformity. In addition, the film
thickness can be accurately controlled by the number of the applied growth cycles.
ALD processes for ruthenium, platinum, iridium, rhodium, and palladium were studied. All
the processes are based on the reaction of the metal precursor with oxygen, the process
temperatures being in the range of 200–450 °C. Metallic ruthenium films with low
resistivity