文档介绍：Atomic Layer Deposition of TaN, NbN, and MoN Films
for Cu Metallizations
Petra Alén
Laboratory of anic Chemistry
Department of Chemistry
University of Helsinki
Finland
ACADEMIC DISSERTATION
To be presented with the permission of the Faculty of Science of the University
of Helsinki for public criticism in Auditorium A129 of the Department of
Chemistry, A. I. Virtasen aukio, on June 22nd, 2005 at 12 o´clock noon.
Helsinki 2005
ISBN 952-91-8796-3 (Paperback)
ISBN 952-10-2497-6 (PDF)
Yliopistopaino
Helsinki 2005
2
Supervisors
Prof. Mikko Ritala
and
Prof. Markku Leskelä
Laboratory of anic Chemistry
Department of Chemistry
University of Helsinki
Finland
Reviewers
Prof. Charles H. Winter
Department of Chemistry
Wayne State University
United States
Prof. Tapio Mäntylä
Institute of Materials Science
Tampere University of Technology
Finland
Opponent
Dos. Jyrki Molarius
Information Technology
VTT Technical Research Centre
Finland
3
4
Abstract
Transition metal nitrides, metal silicides, and metal-silicon-nitrides are
considered the most promising diffusion barrier materials for next generation
ultra large scale integration (ULSI) microelectronics. The semiconductor industry
has long used Ti, Ta, and W based materials, and their material properties have
been very well studied. Recently, tantalum-based materials have been attracting
particular interest. The barrier properties of materials based on other transition
metals have been little studied. In this work, tantalum nitride films were
deposited, with four new reducing agents used to reduce tantalum and obtain the
desired TaN phase. As well, the deposition of niobium and molybdenum nitride
films was investigated. All films were deposited by the atomic layer deposition
(ALD) method, which ensures exc