Thermal Stability of Microwave PECVD Hydrogenated Amorphous Silicon as Surface Passivation for N-type Heterojunction Solar Cells.pdf

文档介绍：THERMAL STABILITY OF MICROWAVE PECVD HYDROGENATED AMORPHOUS SILICON AS SURFACE
PASSIVATION FOR N-TYPE HETEROJUNCTION SOLAR CELLS

. Li 1, . Chen, A. Cuevas 1 and . Cotter
Centre of Excellence for Advanced Silicon Photvoltaics and Photonics, The University of New South Wales, Sydney, .
2052
1 Faculty of Engineering and Information Technology, The Australian National University, Canberra, . 2601
Telephone: [phone], Facsimile: ([phone], Email : tsu-tsung.******@

ABSTRACT: Intrinsic hydrogenated amorphous silicon (a-Si:H) as surface passivation is an important part of
heterojunction solar cells. However, the temperatures used for the post-deposition fabrication of the heterojunction
solar cells are limited by the thermal stability of the a-Si:H. In this work, we investigate the thermal stability of the a-
Si:H as surface passivation on n-type wafers by annealing them at various temperatures. The results indicate that the
annealing temperature is the main factor that determines the thermal stability, while the annealing time also plays a
role. parison, the dependence on the deposition temperature is very small and can be neglected. At a given
annealing temperature, the level of degradation before stabilisation can be limited by restricting the annealing time,
and stability is reached after two t