化学气相沉积法制备Zn2GeO4纳米线.doc

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化学气相沉积法制备 Zn2GeO4 纳米线#
周政,李金华,方芳,楚学影,方铉,魏志鹏,王晓华**
(长春理工大学理学院,长春 130022)
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摘要:Zn2GeO4 纳米材料在发光二极管、光传感器、纳米激光器、光波导和光开关等领域有
着广泛的应用前景。为得到结晶质量高,发光效果较好的三元 Zn2GeO4 纳米线,本文进行
了一系列实验,利用化学气相沉积法(CVD),气-液-固(VLS)生长法则在表面溅有金属 Au
催化剂层的 1cm*1cm 的 Si 片上制备三元 Zn2GeO4 纳米线。X-射线衍射仪(XRD)测试结果表
明,锌源与锗源质量比为 8:1 时成功制备 Zn2GeO4 纳米结构;扫描电子显微镜(SEM)测试结
果表明,Zn2GeO4 纳米线直径为 100nm,长度为 10–11μm;光致发光(PL)测试结果表明
Zn2GeO4 纳米线在 432nm 和 480nm 处具有两个发光峰,综上所述,本文利用化学气相沉积
法成功制备了结晶质量和光致发光效果较好的 Zn2GeO4 纳米线。
关键词:CVD;Zn2GeO4;纳米线;催化剂
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文献标识码:A
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Zn2GeO4 nanowires prepared by chemical vapor deposition
Zhou Zheng, Li Jinhua, FANG Fang, CHU Xueying, FANG Xuan, WEI Zhipeng,
WANG Xiaohua
(School of Science, Changchun University of Science and Technology, ChangChun 130022)
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Abstract: Zn2GeO4 nanomaterial have a wide range of applications in the light-emitting diodes ,
optical sensors, nano- lasers, waveguides and optical switches and other fields , a series of
experiments were conducted, in order to obtained better crystalline quality and PL intensity of
ternary Zn2GeO4 nanowires . Ternary Zn2GeO4 nanowires were prepared by VLS law via the
chemical vapor deposition(CVD) method on 1cm*1cm silicon wafer which was sputtered by
metal Au catalyst. Zn2GeO4 structural was obtained under the condition that the mass ratio of zinc
source and germanium source was 8:1w% as the X-ray diff