文档介绍：
High quality Si doped grown on AlN/AlGaN
superlattice with MOCVD#
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10
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LI Yang, CHEN Shengchang, FANG Yanyan, LI Senlin, TIAN Wu, DAI Jiangnan,
WU Zhihao, CHEN Changqing**
(Huazhong University of Science and Technology/Wuhan National Lab for Optoelectronics,
Wuhan 430074)
Abstract: In this paper, um thick high quality Si doped layer was obtained by
inserting a set of 20 periods AlN/ superlattices for strain relief and improvement of crystal
structure quality. The 295 arcsec FWHM of (0002) X-ray diffraction rocking curve indicates high
crystal quality of the layer and the (10-15) reciprocal lattice map was obtained to estimate the strain
state of the n-. The surface morphology was investigated through atomic force
microscope. Room temperature Hall and Capacitance-Voltage measurement show that the electron
concentration is as high as ×10^18 cm^-3 with a mobility of cm^2/Vs. 310nm UV LED
structures were grown on this n- layer. The current voltage characteristic of the 310nm
UV LED was measured, and the working voltage under 20mA bias is .
Key words: n-; AlN/AlGaN superlattice; anic chemical vapor deposition
(MOCVD)
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Introduction
In recent years, UV optoelectronic devices have e a focus of research because of their
wide promising applications in many fields,