喷淋头高度对MOCVD生长GaN外延层质量的影响.doc

文档介绍：
喷淋头高度对 MOCVD 生长 GaN 外延层质
量的影响
张鑫1,梁红伟1,申人升1,杨德超2,宋世巍1,柳阳1,夏晓川1,张克雄1,杜国
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同1,2**
(1. 大连理工大学物理与光电工程学院,大连 116024;
2. 集成光电子学国家重点实验室,电子科学与工程学院,吉林大学,长春 130012)
摘要:使用 MOCVD 设备进行 GaN 薄膜的生长,通过对喷淋头高度这一参数调整得到不同
的几组 GaN 样品。利用原子力显微镜(AFM)、X 射线衍射(XRD)及白光干涉等测试手段
对所有 GaN 样品进行了表征,分析了喷淋头高度影响 GaN 薄膜生长速率以及质量等指标的
原因。研究发现,喷淋头高度较高时,生长出的 GaN 样品厚度比较均匀,生长速率和表面
粗糙度低,但晶体质量较差。
关键词:氮化镓;金属有机物化学气相沉积;高度调节
中图分类号:0484
Effect of Showerhead Gap Position on the growth of GaN
Epilayer by MOCVD
ZHANG Xin1, LIANG Hongwei1, SHEN Rensheng1, YANG Dechao2, SONG
Shiwei1, LIU Yang1, XIA Xiaochuan1, ZHANG Kexiong1, DU Guotong1,2
(1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian
116024;
2. State Key Laboratory on Integrated Optoelectronics, College of Electronics Science and
Engineering, Jilin University, Changchun 130012)
Abstract: A series of GaN epilayers were grown with different showerhead gap position using
anic Chemical Vapor Deposition. The properties of GaN epilayers were characterized by
atomic force microscopy (AFM), X-ray diffraction (XRD) and White-Light Interferometry. The
effect reason of showerhead gap position on the growth rate and quality of GaN epitaxy films
were analyzed. The result shows that, with the increasing in showerhead gap position, the
roughness of GaN epitaxy films decreased and the thickness was mo