文档介绍：
Quasi-two-dimensional subthreshold voltage model for
supra-deep-submicrometer MOSFET#
Shen Jing, Ke Daoming, Zhou Shaoyang, Xia Dan**
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(Electronics and Information Engineering of AnHui university,Hefei 230601)
Abstract: A new analytical quasi-two-dimensional surface potential model for short-channel MOSFET
is presented in the paper. In this model, one-dimensional differential equation of the potential for the
channel depletion layer can be derived by applying Gauss’s law along the landscape of the channel
depletion layer, the effect of the source and drain potential on the thickness of the channel depletion
layer have been taken into account. The realationship between the potential and the thickness of the
channel depletion layer can be obtained by solving the equation and the threshold voltage can be given
by the thickness of the depletion layer we have obtained .we can verify the accuracy of this model by
using the MEDICI software to simulate the MOSFET with different parameters, finally the results
between simulation and calculations are in good agreement.
Key words: MOS devices; short channel effects; DIBL; surface potential; threshold voltage
0 Introduction
Comparing with the bipolar transistor, MOS transistor is relatively easy miniaturization, low
power consumption, so it has e the mainstream devices of IC. To improve the