文档介绍：
Simulation of Cu(In, Ga)Se2 solar cells with Zn1-χMgχO
buffer layers by SCAPS-1D software#
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SUN Lin, HE Jun*
(Key laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering,
East China Normal University, Shanghai, 200241)
Abstract: The Zn1-χMgχO-buffer/Cu(In,Ga)Se2 solar cells with interface bination are modeled
using SCAPS-1D tool and the performances of these Cu(In,Ga)Se2 (CIGS) solar cells are simulated
and analyzed systematically. Interface bination is predominant in Zn1-χMgχO/CIGS solar cells
with negative conduction band offset (CBO) and Zn1-χMgχO(Eg=) is a very suitable buffer layer
candidate for the CIGS(Eg=) solar cells. Despite that the appropriate CBO between
wide-bandgap CIGS absorber (Eg>) and Zn1-χMgχO can be obtained by adding Mg content, the
efficiency of wide-bandgap CIGS solar cells decreases gradually when the bandgap of Zn1-χMgχO
increases from to gradually. This simulation result can be explained by the series
resistance caused by the depletion layer in n-n heterojunction between ZnO window and Zn1-χMgχO
buffer layer.
Key words: Microelectronics and Solid State Electronics; Thin films; Interfaces; Defects
0 Introduction
The CIGS solar cell is one of the most promising thin film solar cells, because the world
record efficiency of CIGS solar cell with CdS buffer layer is