文档介绍：Electrochimica Acta 120 (2014) 293–301
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Electrochimica Acta
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Plating Uniformity of Bottom-up Copper Pillars and Patterns for IC
Substrates with Additive-assisted Electrodeposition
a a,∗ b a a
Yuanming Chen , Wei He , Xianming Chen , Chong Wang , Zhihua Tao ,
a a c
Shouxu Wang , Guoyun Zhou , Mohamed Moshrefi-Torbati
a
State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
b
Zhuhai Advance Chip Carriers & Electronic Substrate Solutions Technologies Co., Ltd, Zhuhai 519175, China
c
Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ, United Kingdom
a r t i c l e i n f o a b s t r a c t
Article history: Electrochemical behaviors of the base electrolyte containing different additives were investigated by
Received 29 August 2013
galvanostatic potential transient measurements (GM), cyclic voltammetry tests (CV) and potentiostatic
Received in revised form
measurements. Copper deposits on sputtering copper seed from physical vapor deposition (PVD) were
20 December 2013
examined by a scanning electron microscope and X-ray diffraction spectra. Cross sections of copper pil-
Accepted 23 December