文档介绍：微电子技术学科前沿FinFETSiGe
微电子技术学科前沿FinFETSiGe微电子技术学科前沿FinFETSiGe 能攻心则侧反自消,自古知兵非好战
不审势则宽严皆误,后来治蜀要深思
本课尝试：
1. 介绍有关微电子技术的更广泛的知识
2. 介绍一些重要器件与电路发明的思路
希望大家不仅仅是从专业上理解本课内容
微电子技术前沿— 微电子中的人类智慧
2020/11/26
1
能攻心则侧反自消,自古知兵非好战
不审势则宽严皆误,后来治蜀要深思
本课尝试：
1. 介绍有关微电子技术的更广泛的知识
2. 介绍一些重要器件与电路发明的思路
希望大家不仅仅是从专业上理解本课内容
微电子技术前沿— 微电子中的人类智慧
2020/11/26
2
2020/11/26
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Fin-FET Background
First developed by Chenming Hu and colleagues at the University of California at Berkeley, which attempts to overcome the worst types of short-channel effect encountered by deep submicron transistors.
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Fin-FET Background
These kinds of effects(SCE) make it harder for the voltage on a gate electrode to deplete the channel underneath and stop the flow of carriers through the channel – in other words, to turn the transistor Off.
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Gate can’t control the leakage current paths that are far from the gate
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Introduction to Double-Gate
The gate controls a thin body from two sides.
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Double-Gate MOSFET Structure options
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Double‐Gate vs. Tri‐Gate FET
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Double‐Gate vs. Tri‐Gate FET
The Double‐Gate FET does not require a highly selective gate etch, due to the protective dielectric hard mask.
Additional gate fringing capacitance is less of an issue for the Tri‐Gate FET, since the top fin surface contributes to current conduction in the ON state.
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