文档介绍：J Mater Sci: Mater Electron (2016) 27:1616–1621
DOI -015-3932-0
Synthesis and characterization of nanophase zinc oxide materials
1 1 1 1
Y. Aditya Sumanth • R. Annie Sujatha • S. Mahalakshmi • P. C. Karthika •
2,4 3 1
S. Nithiyanantham • S. Saravanan • M. Azagiri
Received: 15 August 2015 / Accepted: 19 October 2015 / Published online: 24 October 2015
Ó Springer Science+Business Media New York 2015
Abstract The substantial and intriguing applications in 1 Introduction
the field of optoelectronics, the fabrication of nano struc-
ture of ZnO based UV LEDs, FETs has been stalled Zinc oxide is II–VI group with a wide direct band gap
because of the challenges/demand to put forth in the eV and the most stable crystal structure of ZnO is
growth of highly stable, low resistive and high device hexagonal wurzite structure is an excellent for opto-elec-
performance. Growth of these Nano structure is difficult tronic device application. It has a direct band gap in the near
because of the self- compensating native donor defects, ultraviolet (UV) spectral region. Excitonic binding energy
oxygen vacancies (Vo) and zinc interstitials (Zni) in the of ZnO is 60 meV. So the excitonic emission processes can
system. The n-type conductivity can