文档介绍：HIGH FREQUENCY NOISE IN
CMOS LOW NOISE AMPLIFIERS
A DISSERTATION
SUBMITTED TO THE DEPARTMENT OF
ELECTRICAL ENGINEERING
AND MITTEE ON GRADUATE STUDIES OF
STANFORD UNIVERSITY
IN PARTIAL FULFILLMENT OF THE REQUIREMENTS
FOR THE DEGREE OF
DOCTOR OF PHILOSOPHY
Jung-Suk Goo
August 2001
c Copyright by Jung-Suk Goo 2001
All Rights Reserved
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I certify that I have read this dissertation and that in my opinion it is fully adequate,
in scope and in quality, as a dissertation for the degree of Doctor of Philosophy.
Robert W. Dutton
(Principal Advisor)
I certify that I have read this dissertation and that in my opinion it is fully adequate,
in scope and in quality, as a dissertation for the degree of Doctor of Philosophy.
Thomas H. Lee
(Associate Advisor)
I certify that I have read this dissertation and that in my opinion it is fully adequate,
in scope and in quality, as a dissertation for the degree of Doctor of Philosophy.
Zhiping Yu
Approved for the mittee on Graduate Studies:
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Abstract
T HE IMPORTANCE OF CMOS TECHNOLOGY is increasing in RF design applica-
tions owing to the promise of integrating electronic systems on a single silicon
chip. plete broad band characterization and accurate modeling of the MOSFET
noise are critical requirements for circuit designs, the noise behavior and physics in short
channel MOSFETs is not well understood. This dissertation explores the physical origin
and contributing mechanisms of noise in MOSFETs, as well as a design methodology to
minimize the impact of noise on fully integrated LNAs.
Investigating the physical noise sources in the MOSFET imposes puta-
tional requirements, due to the multi-dimensional nature of the device. In addition, higher
order transport models need to be considered due to aggressive channel-length scaling.
This dissertation presents a quasi two-dimensional noise simulation technique which pro-
vides an accurate and fast solution for MOSFET noise a