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LOW NOISE LOW OFFSET OPERATIONAL AMPLIFIER FOR NANOPORE-BASED GENE SEQUENCER.pdf

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LOW NOISE LOW OFFSET OPERATIONAL AMPLIFIER FOR NANOPORE-BASED GENE SEQUENCER.pdf

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文档介绍:LOW NOISE LOW OFFSET OPERATIONAL AMPLIFIER FOR
NANOPORE-BASED GENE SEQUENCER
By
Zhineng Zhu
. Hefei University of Technology, 1998
A THESIS
Submitted in Partial Fulfillment of the
Requirements for the Degree of
Master of Science
(in Electrical Engineering)
The Graduate School
The University of Maine
May, 2007
mittee:
David E. Kotecki, Associate Professor of Electrical puter Engineering,
Advisor
Donald M. Hummels, Professor of Electrical puter Engineering
Rosemary Smith, Professor of Electrical puter Engineering
LIBRARY RIGHTS STATEMENT
In presenting this thesis in partial fulfillment of the requirements for an advanced
degree at The University of Maine, I agree that the Library shall make it freely available
for inspection. I further agree that permission for “fair use” copying of this thesis for
scholarly purposes may be granted by the Librarian. It is understood that any copying
or publication of this thesis for financial gain shall not be allowed without my written
permission.
Signature:
Date:
LOW NOISE LOW OFFSET OPERATIONAL AMPLIFIER FOR
NANOPORE-BASED GENE SEQUENCER
By Zhineng Zhu
Thesis Advisor: Dr. David E. Kotecki
An Abstract of the Thesis Presented
in Partial Fulfillment of the Requirements for the
Degree of Master of Science
(in Electrical Engineering)
May, 2007
A nanopore-based gene sequencer generates a modulated current signal with the
expected magnitude to be in the range of several pico-amps to a nano-amp, and the
bandwidth up to 10MHz. To detect such a weak signal, an ultra-low noise, low offset,
high precision CMOS operational amplifier is designed in a µm CMOS process.
Most of the literature on low noise amplifier design emphasizes flicker noise
reduction. This research analyzed and optimized a proposed differential pair and opera-
tional amplifier, with both the flicker noise and the thermal noise minimized simultane-
ously. The size of each MOSFET is optimized, making the inpu