文档介绍：Thin Solid Films 433 (2003) 22–26
Advanced light emitting diodes structures for optoelectronic applications
J. Kovac*, L. Peternai, O. Lengyel
Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, Bratislava 812 19, Slovak Republic
Abstract
This review summarises the recent progress in development of advanced high brightness and white light emitting diodes
(LEDs) that have been reported by several laboratories. Two main orientations in LED fabrication based on anic anic
semiconductor materials are described. LEDs offer a number of pared to existing light sources in optoelectronic
applications. These include increased lifetime, reduced power consumption, higher brightness and better spectral purity.
ᮊ 2003 Elsevier Science . All rights reserved.
Keywords: Light emitting devices; HB LEDs; White LED; OLEDs
1. Introduction semiconductor materials are different from those of
anic semiconductor materials
Nowadays, one of the most important part of optoe-
lectronic devices are light emitting diodes (LEDs), 2. LED’s evolution
because several factors are driving their development.
The most important ones are brightness, efficiency, The first LED was developed in the sixties based on
flexibility, lifetime, rugged construction, low power con- GaAsP layers, by Holonyak w1x. It emitted red light
sumption and suitable driving voltage. These