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Physica E 16 (2003) 351–358
ate/physe
High-e!ciency silicon light emitting diodes
Martin A. Green∗, Jianhua Zhao, Aihua Wang, Thorsten Trupke
Centre for Third Generation Photovoltaics, University of New South Wales, Sydney 2052, Australia
Abstract
Silicon has been regarded as a notoriously poor emitter of light fundamentally due to its indirect bandgap. However,
as an elemental rather than pound semiconductor, it has the advantage of fewer background defects as well as
well-developed approaches to interface passivation. By minimising parasitic optical absorption and non-radiative bulk and
surface bination, and by enhancing the e2ective optical photon generation volume, respectable silicon light emission
e!ciencies are demonstrated. These are within the range of direct gap III–V semiconductors and higher than any at low
powered densities. Possible applications are also discussed.
? 2002 Elsevier Science . All rights reserved.
PACS: .−z; .−m; ;
Keywords: Silicon light emission; Light emitting diodes; Silicon modulators
1. Introduction material and hence optical processes are weak, in-
volving at least one phonon. However, there is a fun-
There has been enormous interest in the develop- damental reciprocal relation between light absorption
ment of e!cient silicon light emitting diodes (LEDs), and emissio