文档介绍：Characterization and Modeling of SiC Power MOSFETs
THESIS
Presented in Partial Fulfillment of the Requirements for the Degree Master of Science in
the Graduate School of The Ohio State University
By
Xiangxiang Fang
Graduate Program in Electrical puter Science
The Ohio State University
December 2012
Master's mittee:
Professor Wu Lu, Advisor,
Professor Jin Wang
Copyright by
Xiangxiang Fang
2012
Abstract
SiC power MOSFETs are great candidates for high-voltage power switching
applications because of their lower on-resistance and faster switching pared
with silicon power MOSFETs. In this study, a TO-247 packaged, , 15A SiC
MOSFET manufactured by GE has been investigated. The static characteristics of the
device have firstly been performed using an Agilent power curve tracer at room
temperature to get basic device performance, including DC characteristics (current-
voltage characteristics, I-V) and AC characteristics (capacitance-voltage characteristics
C-V). The input, output, reverse transfer capacitance of SiC MOSFET (CISS, COSS, CRSS
respectively) and package stray inductances are of vital importance to the SiC MOSFET
as they determine the dynamic behavior of the device during switching transients.
Based on the characterization results, two different modeling methods have been
implemented for the SiC MOSFET. A double-pulse tester (DPT) was built to perform
switching characteristics of SiC MOSFET at 100V drain bias, 10A load current level and
the same DPT circuit has been implemented in Synopsys Saber to verify the device
models previously built. parison of simulated static and dynamic characteristics to
measurement data, both models we built have been verified. Good agreements were
obtained between the device models and experimental results. Approaches to improve the
models have been investigated and limitations of the model have been discussed.
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Dedication