文档介绍：“OMEGA” GROWER
Catalog
General view of assembled grower “Omega”.
2. Technical purpose of the grower “Omega”.
The grower is intended for growing sapphire single crystals with diameter up to 200 mm and length up to 200 mm and weight up to 20 kg by the Kyropoulos method. The method consists in heating the initial raw material (aluminum oxide) in a tungsten crucible up to its melting point 2050 oC or above and gradual decreasing the melt temperature to crystallize it on a special seed. The growth is conducted in an air-locked crystallizer having special thermoisolating shields, covers and heater with charged crucible inside.
3. Technical specifications of the grower “Omega”.
Parameter
Value
Mode of operation
continuous for 200 hours
Melt temperature, oC
2050
Heater power, kW
80
Current
. 3-phase with zero wire, 380 V, 50 Hz
Medium of operation
vacuum up to 8x10-4 Pa, after growth - argon
Method of heating
resistive
Duration of a cycle, hrs
200
Cooling water temperature, oC
flowrate
28 ± 5
3 m3 x hr
The load distribution between the phases is to be as follows : Phase A – 250 A, phase B – 250 A, phase C – 20 A.
To start the operation it is necessary to supply the grower with:
recirculated water of I category under the pressure of 0,4 ± 0,05 MPa.
pure gaseous argon under the pressure of 0,06 MPa (0,6 kgf/cm2).
For arrangement o