文档介绍：1 Chapter 3 Problem Set
Chapter 3
PROBLEMS
For all problems, use the device parameters provided in Chapter 3 (Tables and ) and the inside
back book cover, unless otherwise mentioned. Also assume T = 300 K by default.
1. [E,SPICE,]
a. Consider the circuit of Figure . Using the simple model, with VDon = V, solve for ID.
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b. Find ID and VD using the ideal diode equation. Use Is = 10 A and T = 300 K.
c. Solve for VD1, VD2, and ID using SPICE.
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d. Repeat parts b and c using IS = 10 A, T = 300K, and IS =10 A, T = 350 K.
R1 = 2kΩ
+ ID R2 = 2kΩ
V +
– VD
–
Figure Resistor diode circuit.
2
2. [M, None, ] For the circuit in Figure , Vs = V. Assume AD = 12 µm , φ0 = V,
and m = . NA = E16 and ND = 5 E15.
a. Find ID and VD.
b. Is the diode forward- or reverse-biased?
c. Find the depletion region width, Wj, of the diode.
d. Use the parallel-plate model to find the junction capacitance, Cj.
e. Set Vs = V. Again using the parallel-plate model, explain qualitatively why Cj
increases.
Rs = 2 kΩ
+ –
Vs= I V
– D D
+ Figure Series diode circuit
3. [E, None, ] Figure shows NMOS and PMOS devices with drains, source, and gate
ports annotated. Determine the mode of operation (saturation, linear, or cutoff) and drain cur-
rent ID for each of the biasing c