文档介绍：Page 77 Friday, January 18, 2002 9:00 AM
CHAPTER
3
THE DEVICES
Qualitative understanding of MOS devices
n
ponent models for manual analysis
n
ponent models for SPICE
n
Impact of process variations
Introduction Dynamic Behavior
The Diode The Actual MOS Transistor—Some
Secondary Effects
A First Glance at the Diode — The
SPICE Models for the MOS Transistor
Depletion Region
Static Behavior A Word on Process Variations
Dynamic, or Transient, Behavior Perspective: Technology Scaling
The Actual Diode—Secondary Effects
The SPICE Diode Model
The MOS(FET) Transistor
A First Glance at the Device
The MOS Transistor under Static
Conditions
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78 THE DEVICES Chapter 3
It is a well-known premise in engineering that the conception of plex construction
without a prior understanding of the underlying building blocks is a sure road to failure.
This surely holds for digital circuit design as well. The basic building blocks in today’s
digital circuits are the silicon semiconductor devices, more specifically the MOS transis-
tors and to a lesser degree the parasitic diodes, and the interconnect wires. The role of the
semiconductor devices has been appreciated for a long time in the world of digital inte-
grated circuits. On the other hand, interconnect wires have only recently started to play a
dominant role as a result of the advanced scaling of the semiconductor technology.
Giving the reader the necessary knowledge and understanding of ponents
is the prime motivation for the next two chapters. It is not our intention to present an in-
depth treatment of the physics of semiconductor devices and interconnect wires. We refer
the reader to the many excellent textbooks on semiconductor devices for that purpose,
some of which are referenced in the To