文档介绍：櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶
doi:10 3969 / j issn1003353x2010 z1019
表面贴装功率MOSFET 封装技术研究进展
褚华斌,胡俊,陈素鹏
(广东省粤晶高科股份有限公司,广州510663)
摘要:表面贴装功率MOSFET 是最主要的功率半导体器件之一。随着Si 技术的改进,功率
MOSFET 的R DS (on)、器件发热量和外形缩小到相当低的水平,封装技术已经上升成为制约器件
性能提高的瓶颈,因此多种专门针对表面贴装功率MOSFET 的新型封装技术不断出现。从先进的
封装结构和一级互连技术入手,对表面贴装功率MOSFET 的封装技术进行分析探讨和总结,并对
其未来的发展趋势进行展望。
关键词:表面贴装功率MOSFET; R DS (on);封装结构;一级互连;立体封装;可靠性
中图分类号:TN3 文献标识码:A 文章编号:1003353X (2010)增刊006503
Research Progress in Packaging Technology of
SurfaceMounted Power MOSFET
Chu Huabin,Hu Jun,Chen Supeng
(Guangdong Yuejing High Technology Co , Ltd , Guangzhou 510663, China)
Abstract:Surfacemounted power MOSFET is one of the most important power semiconductor devices .
With the improvement in silicon technology, R DS (on), dissipation heat and form size of power MOSFET
have down to very low levels, and packaging technology has risen to e the bottleneck restricting the
device performance,so a variety of specific and new packaging technology for surfacemounted power MOSFE
continue to emerge . A dvanced packaging structure and onelevel interconnect technology for surfacemounted
power MOSFE were explored and summarized . Future Packaging development of surfacemounted power
MOSFET was also prospected .
Key words: surfacemounted power MOSFET; R DS (on ); packaging structure; onelevel
interconnect;3D packa