文档介绍：Supplementary Information
Tuning the Properties of Graphene by a Reversible Gas-Phase Reaction
Lin Gan1, Jian Zhou2, Fen Ke3, Hang Gu1, Danna Li1, Zonghai Hu3, Qiang Sun2, Xuefeng Guo*1,2
1Center for NanoChemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
2Department of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
3College of Physics, Peking University, Beijing 100871, P. R. China.
*To whom correspondence should be addressed. Email: ******@pku.
Fig. S1: Schematic representation of the fabrication procedure to form graphene- based transistor arrays.
Fig. S2: a, An optical image of large-area graphenes after PMMA-mediated nanotransfer process on a silicon wafer. b, Schematic representation of the SLG device array. c, The enlarged optical image of a representative device. The average width of graphene sheets is ~ 70 mm. d, A representative Raman spectrum of the grown graphene. e, A representative high-resolution TEM image of SLG.
Fig. S3. Intensity profile plot along the line indicated by the arrows in Fig. 3e. The intensities of the diffraction spots from outer hexagon is equivalent to that from inner hexagon, confirms that our graphene samples