文档介绍：
硅衬底上生长 ZnS 薄膜及其性能研究#
金凯,李英兰,王志**
(北京理工大学物理学院,北京 100081)
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摘要:用分子束外延(MBE)设备在 Si(100)衬底上成功制备了单一相的 ZnS 纳米薄膜,并初
步研究了其光学特性。研究表明:ZnS 纳米薄膜的紫外-可见吸收峰在 250 nm 处,相对于体
材料紫外吸收峰发生了明显的蓝移。在激发波长为 315 nm 的激发下,获得了一个强的荧光
发光峰,峰位位于 464 nm。由其紫外吸收谱知,荧光发光非本征发光,是缺陷发光。不同
生长条件下,发光峰峰位有明显移动。
关键词:凝聚态物理;分子束外延;ZnS 薄膜;光学特性
ZnS thin films grown on silicon substrates and its properties
JIN Kai, LI Yinglan, WANG Zhi
(School of Physics, Beijing Institute of Technology, Beijing 100081)
Abstract: Based on the review of low-dimensional material and its applications and preparation
methods, single-phase ZnS nano-films were prepared on Si (100) substrates with MBE. The study
of optical properties shows that the ZnS nano-films UV-visible absorption peak is at 250nm.
Compare to the material UV spectra,the absorption peak have a significant blue shift. In the
excitation wavelength of 315 nm, a strong emission peak at 464 nm is found. Its UV absorption
spectrum shows that the fluorescence emission is not extrinsic luminescence but defective lighting.
With different growth conditions, the emission peak moved apparently.
Keywords: Condensed Matter Physics; MBE; ZnS Nano-film; al Properties
0 引言
ZnS 作为一种重要的化合物半导体材料,具有优良的光电性能,广泛应用于各种光学
和光电器件中,是一种在太阳电池、光学镀膜材料、激光二极管、电致发光器件、电光探测
器等领域中很有应用潜力的材料。如红外光学窗口材料、平板显示器、发光二极管及太阳能
电池等领域[1-4]。薄膜的微结构决定性能,因此若 ZnS 制成的器件结晶度不良,则会引起
器件发光亮度低、启动电压高