文档介绍：Siliconingot硅锭Wafer晶片Mirrorwafer镜面晶圆Patter晶圆片FAB:fabrication制造FabricationFacility制造wafer生产工厂Probetest探针测试Probecard探针板Contact连接ProbeTip探头端部ChipFunction功能EPM:ElectricalParameterMonitoringSummary总结R&D:ResearchandDevelopment研究和开发MCP:MultiChipPackage多芯片封装POP:PackageonPackagee-MMC:embeddedMultiMediacard嵌入式多媒体卡WLP:WaferLevelPackage晶圆级封装SDP一层DDP两层QDP四层ODP八层PadoutBackGrind背研磨WaferGrindBackGrind磨片Overview概述TPM:TotalProfitManagementSKTPMOperation操作Erase消除KeyPara.:Keyparameter关键参数Cycling写入次数、循环次数Retention保留时间Non-VolatilememoryVolatilememoryRead读Write写Refresh更新Speed速度、速率、转速Restore修复、恢复ElectricalSignal电信号WFBI:WaferBurn-InPT1H:ProbeTest1HotTestPT1C:ProbeTest1ColdTestL/Rep:LaserRepairPurpose目的Substrate基片Trend趋势SmallSize小体积HighDensity高集成HighSpeed高速度Roadmap路标TSOP:Thinsmalloutlinepackage薄型小尺寸封装FBGA:(FineBallGridArray)package细间距球栅阵列(一种封装模式)FlipChipPackage:在wafer的chip上形成bump直接在substrate或PCB基板上填充形态,使I/O最高密度化的填充方式。Stack堆叠stackpackageB/G:BackGrind背研磨W/S:WaferSawD/A:DieAttachW/B:WireBondM/D:MoldM/K:MarkingSBM:SolderBallMountS/G:SingulationEMS:pound环氧树脂Assembly装配、集会、集合PreLoardTDBI:TestDuringBurnInEarlyfailure初期不良率Constantfail-rate稳定的fail分布Wear-out磨损PDA:PercentageDefectAllowanceBurn-In后Device的可靠性check的基准Burn-In高温加速老化试验MVP:MarkingVisualPackingM/S:Markingstore按speed分类……Laser激光Server服务器FB-DIMM:FullyBufferedDualIn-lineMemoryModule全缓存双线内存模组So-DIMM:SmalloutlineDIMM笔记本内存Application应用程序Shipping产品出口PCB::apacitor多层陶瓷电容器A/R:ArrayResister数组电阻器ChipResister片状电阻器EEPROM:ElectricallyErasableProgrammableReadOnlyMemory电可擦只读储存器PrintPCBPad上涂抹SolderPasteSolder焊接ChipMount往PCB上Mount附件Reflow用Reflow用产生的热来使附件和PCB进行连接AutoOpticalInspection经过光学检查附件的Joint状态LabelAttach用Auto在Module上贴LabelRouter分割连在一起的PCBAOQ:AverageOutgoingQuality平均出货品质T/B:TestBankLOAD:LoadingU/L:UnloadingLIS:LeadInspectionSystemFVI:FinalVisualInspection最后外观检查EFR:EarlyFailureRateQPE:QAPackageElectricalQPV:QAPackageVisualIPK:InnerBoxPackingQPP:QAPackagePackingQFS:QAFinishedGoodsStoreFGS:FinishedGoodsStoreTAT:TurnAroundTimeLithography光刻Microlithography显微光刻Expos