文档介绍：Hindawi Publishing Corporation
Advances in OptoElectronics
Volume 2007, Article ID 69578, 11 pages
doi:
Research Article
Silicon Quantum Dots in a Dielectric Matrix for
All-Silicon Tandem Solar Cells
Eun-Chel Cho,1 Martin A. Green,1 Gavin Conibeer,1 Dengyuan Song,1 Young-Hyun Cho,1
Giuseppe Scardera,1 Shujuan Huang,1 Sangwook Park,1 X. J. Hao,1 Yidan Huang,1 and Lap Van Dao2
1 ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney 2052, NSW, Australia
2 ARC Centre of Excellence for Coherent X-Ray Science, Swinburne University of Technology, Hawthorn 3122, VIC, Australia
Received 1 April 2007; Accepted 26 June 2007
mended by Armin G. Aberle
We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work
reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quan-
tum dots and to utilize this plete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which
heless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dis-
persed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive
sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence
of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL
decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of nm dot with increasing detection wavelength.
Copyright © 2007 Eun-Chel Cho et al. This is an open access article distributed under the mons Attribution License,
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
1. INTRODUCTION Ther