文档介绍：Siliconingot 硅锭Wafer晶片Mirrorwafer镜面晶圆Patter晶圆片FAB:fabrication制造FabricationFacility 制造wafer生产工厂Probe test探针测试Probecard探针板Contact连接ProbeTip探头端部ChipFunction 功能EPM:ElectricalParameterMonitoringSummary总结R&D:ResearchandDevelopment研究与开发MCP:Multi ChipPackage多芯片封装POP:PackageonPackagee-MMC:embeddedMultiMediacard嵌入式多媒体卡WLP:Wafer LevelPackage晶圆级封装SDP 一层DDP两层QDP四层ODP八层PadoutBackGrind背研磨Wafer GrindBack Grind磨片Overview 概述TPM:Total ProfitManagementSKTPMOperation 操作Erase消除Key Para。:Key parameter关键参数Cycling写入次数、循环次数Retention保留时间Non-VolatilememoryVolatilememoryRead 读Write写Refresh更新Speed速度、速率、转速Restore修复、恢复ElectricalSignal 电信号WFBI:Wafer Burn—InPT1H:ProbeTest1 HotTestPT1C:Probe Test1ColdTestL/Rep:LaserRepairPurpose目得Substrate基片Trend 趋势Small Size小体积HighDensity高集成HighSpeed高速度Roadmap路标TSOP:Thinsmall outlinepackage薄型小尺寸封装FBGA:(FineBallGridArray)package细间距球栅阵列(一种封装模式)FlipChipPackage: 在wafer得chip上形成bump直接在substrate或PCB基板上填充形态,使I/O最高密度化得填充方式。Stack堆叠stackpackageB/G:Back Grind 背研磨W/S:WaferSaw D/A:Die AttachW/B:Wire BondM/D:MoldM/K:MarkingSBM:Solder BallMountS/G:SingulationEMS:Epoxy pound环氧树脂Assembly装配、集会、集合Pre LoardTDBI:Test DuringBurnInEarlyfailure初期不良率Constantfail-rate稳定得fail分布Wear—out磨损PDA:PercentageDefectAllowance Burn-In后Device得可靠性check得基准Burn—In 高温加速老化试验MVP :MarkingVisualPackingM/S:Markingstore 按speed分类……Laser激光Server 服务器FB-DIMM:Fully Buffered DualIn—lineMemoryModule全缓存双线内存模组So-DIMM:Smalloutline DIMM 笔记本内存Application应用程序Shipping产品出口PCB::MultiLayer Ceramic Capacitor多层陶瓷电容器A/R:Array Resister数组电阻器ChipResister片状电阻器EEPROM:ElectricallyErasableProgrammableRead OnlyMemory 电可擦只读储存器PrintPCB Pad上涂抹SolderPasteSolder焊接ChipMount往PCB上Mount附件Reflow用Reflow用产生得热来使附件与PCB进行连接AutoOpticalInspection通过光学检查附件得Joint状态LabelAttach用Auto在Module上贴LabelRouter分割连在一起得PCBAOQ:AverageOutgoingQuality平均出货品质T/B:Test BankLOAD:LoadingU/L:UnloadingLIS:LeadInspectionSystemFVI:Final Visual Inspection最后外观检查EFR:EarlyFailureRateQPE:QAPackageElectricalQPV:QAPackageVisualIPK:InnerBoxPackingQPP:QAPackagePackingQFS:QAFinishedGoodsStoreFGS:F