文档介绍：上海交通大学
硕士学位论文
高压功率MOS栅驱动电路的研究和实现
姓名:虞海燕
申请学位级别:硕士
专业:电路与系统
指导教师:林争辉
20040101
高压功率栅驱动电路的研究和实现

摘要

本文在分析了国内外高压集成电路发展现状的基础上研制了一种
用于功率栅极驱动的高压功率集成数模混合电路
并建立了相应的工艺平台
本文所设计的在工艺上采用
技术将多种器件如高压各种
击穿电压不等的管二极管电阻电容等集成在同一芯片上
并保证电路在高压下协同工作为将高低压电路集成在同一芯片上
采用结对通隔离技术将连接不同电源电位的衬底隔离开
在电路设计中作者分析了功率器件对驱动电路的要求设计了驱
动电路的总体结构对电路关键参数高低压电平位移脉冲宽度高端滤
波电路滤波宽度以及电平移位电路中与管并联的电阻的大小等进
行了重点分析并完成了各单元电路的设计包括欠压保护电路的设计
为防止高压直流电路直臂导通设计了合理的死区时间并通过控制工
作在高压的的导通时间达到低功耗设计的目的输出模块采
用推挽输出结构
I
为确保电路能正常工作对电路中的关键元件及耐高压的终
端结构的设计进行了仿真和试制验证确保其可行性最终的流片结果
表明该结构不仅能耐的高压而且其特性符合我们的预期设
计工艺方案上根据多次流片结果在确保高耐压的前提下
为提高其它器件的性能减小效应作了适当的调整和改进
在完成该电路的原理图设计以及确定了工艺方案的前提下完成了
版图设计并作了相应的检查

关键词高压集成数模混合电路
工艺终端技术横向双扩散
II
The Research and Implementation of High Voltage IC That
Drives Power MOSFET or IGBT Transistors

Abstract
This paper discussed a process of HVIC design including the schematic
design layout design technical process design and other problems
encountered in this project. This HVIC can operate in 600V condition.
The HVIC use ABCD technique to integrate all kinds of devices such as
MOS devices bipolar devices DMOS and so on in same die. PN junction
isolation technique is used to isolate the different voltage sources which are
connected to one substrate.
We designed the schematic circuit based on analyzing the requirement to
drive the power device such as MOSFET IGBT etc.. The key parts of the
circuit design are as follows, pulse width and the resistors parallel connected
to ZENER in the level shifter part and delay time of the filter circuit. Besides
these, we also designed general circuit module including insufficient voltage
protect module, dead time control module, voltage match and logic control
module and input-output protect circuit and so on.
III
To ensure the reliability of this HVIC, we have the structure of LDMOS
and junction termination structure which can bear high voltage simulated
many times. The